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Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

Identifieur interne : 004B47 ( Main/Repository ); précédent : 004B46; suivant : 004B48

Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

Auteurs : RBID : Pascal:09-0342983

Descripteurs français

Pascal (Inist)
- Mode transversal, Laser semiconducteur, Laser émission surface, Diode laser, Structure cristalline, Cristal photonique, Composé binaire, Semiconducteur III-V, Indium Phosphure, Laser cavité verticale, Composé quaternaire, In P, InP, VCSEL, AlInGaAs, 4255P, 4270Q, Gain optique.

English descriptors

KwdEn :
- Binary compounds, Crystal structure, III-V semiconductors, Indium Phosphides, Laser diodes, Optical gain, Photonic crystals, Quaternary compounds, Semiconductor lasers, Surface emitting lasers, Transverse mode, Vertical cavity laser.

Abstract

A self-consistent electrical-thermal-optical-gain modeling of threshold characteristics of an InP-based 1300 nm AlInGaAs photonic-crystal vertical-cavity surface-emitting diode laser is presented. It is shown that low threshold characteristics and strong transverse-mode discrimination can be simultaneously achieved for optimized photonic crystal structure and current aperture.

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Pascal:09-0342983

Le document en format XML

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<author><name sortKey="Czyszanowski, Tomasz" uniqKey="Czyszanowski T">Tomasz Czyszanowski</name>
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<country>Pologne</country>
<wicri:noRegion>93-005 Lodz</wicri:noRegion>
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<author><name sortKey="Sarzala, Robert P" uniqKey="Sarzala R">Robert P. Sarzala</name>
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<s2>93-005 Lodz</s2>
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</author>
<author><name sortKey="Dems, Maciej" uniqKey="Dems M">Maciej Dems</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Technical University of Lodz, ul. Wolczanska 219</s1>
<s2>93-005 Lodz</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
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<author><name sortKey="Thienpont, Hugo" uniqKey="Thienpont H">Hugo Thienpont</name>
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<author><name sortKey="Panajotov, Krassimir" uniqKey="Panajotov K">Krassimir Panajotov</name>
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<date when="2009">2009</date>
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<front><div type="abstract" xml:lang="en">A self-consistent electrical-thermal-optical-gain modeling of threshold characteristics of an InP-based 1300 nm AlInGaAs photonic-crystal vertical-cavity surface-emitting diode laser is presented. It is shown that low threshold characteristics and strong transverse-mode discrimination can be simultaneously achieved for optimized photonic crystal structure and current aperture.</div>
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<sZ>2 aut.</sZ>
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<sZ>6 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>A self-consistent electrical-thermal-optical-gain modeling of threshold characteristics of an InP-based 1300 nm AlInGaAs photonic-crystal vertical-cavity surface-emitting diode laser is presented. It is shown that low threshold characteristics and strong transverse-mode discrimination can be simultaneously achieved for optimized photonic crystal structure and current aperture.</s0>
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<s4>INC</s4>
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Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri